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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-1000
Features
* High Output Power: +27 dBm Typical P1dB at 1.0 GHz * Low Distortion: 37 dBm Typical IP3 at 1.0 GHz * 8.5 dB Typical Gain at 1.0 GHz * Impedance Matched to 25 for Push-Pull Configurations
amplifiers in industrial and military systems. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire. This chip is intended to be used with an external blocking capacitor completing the shunt feedback
Chip Outline[1]
3 1 4
2
AK
2
2
2
Description
The MSA-1000 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use in a push-pull configuration in a 25 system. The MSA-1000 can also be used as single-ended amplifier in a 50 system with slightly reduced performance. Typical applications include narrow and broadband RF
path (closed loop). Data sheet characterization is given for a 80 pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.[1]
Note: 1. Refer to the APPLICATIONS section "Silicon MMIC Chip Use" for additional information.
Typical Push-Pull Biasing Configuration
R bias CFbl RFC C block 1 50 1
MSA
VCC > 20 V
4 C block
MSA
IN
3 2 2 3 C block RFC CFbl VCC > 20 V R bias Vd = 15 V 50 OUT
C block
4
5965-9553E
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MSA-1000 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 425 mA 7.0 W +25 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 10C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25C. 3. Derate at 100 mW/C for TMounting Surface > 130C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions[2]: Id = 325 mA, ZO = 25
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[3] Input VSWR Output VSWR 25 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 2.0 GHz f = 0.1 to 2.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 to 2.0 GHz
Units
dB dB GHz
Min.
Typ.
8.5 0.6 2.6 2.0:1 2.5:1
Max.
dB dBm dBm psec V mV/C 13.5
7.0 27.0 37.0 175 15.0 -18.0 16.5
Notes: 1. The recommended operating current range for this device is 150 to 400 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer. 3. Referenced from 0.1 GHz gain (G P).
Part Number Ordering Information
Part Number MSA-1000-GP4 Devices Per Tray 100
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MSA-1000 Typical Scattering Parameters[1,2] (Z = 50 , TA = 25C, Id = 325 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.001 0.005 0.010 0.050 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000
.41 .52 .54 .54 .55 .55 .54 .52 .51 .50 .48 .47 .46 .46 .48 .56 .61
-121 -167 -174 -179 179 178 176 174 174 172 173 175 178 179 -177 -170 -171
15.5 8.7 7.7 7.3 7.2 7.2 7.2 7.2 7.2 7.2 7.2 7.1 6.8 6.4 6.0 4.4 2.7
5.95 2.73 2.41 2.31 2.30 2.30 2.29 2.30 2.29 2.29 2.28 2.26 2.20 2.09 1.99 1.65 1.36
149 156 166 174 173 168 157 146 134 121 108 96 83 62 56 35 12
-17.7 -15.7 -15.6 -15.7 -15.7 -15.7 -15.7 -15.8 -15.8 -15.9 -16.0 -16.2 -16.3 -16.5 -16.6 -17.0 -16.7
.130 .164 .166 .165 .165 .165 .165 .163 .161 .160 .158 .155 .153 .150 .148 .141 .147
22 6 3 1 -1 -1 -3 -4 -5 -5 -6 -7 -7 -8 -10 -1 1
.43 .48 .46 .46 .46 .47 .48 .48 .48 .49 .49 .50 .51 .53 .65 .54 .69
-99 -161 -171 -178 -179 177 176 174 173 172 172 174 175 176 -179 178 -176
0.68 1.02 1.12 1.17 1.17 1.16 1.16 1.16 1.15 1.12 1.10 1.05 1.00 0.94 0.68 .91 .52
Notes: 1. S-parameters are de-embedded from 100 mil BeO package measured data using the package model found in the DEVICE MODELS section. 2. S-parameter data assumes an external 80 pF capacitor. Low frequency performance can be extended using a larger valued capacitor.
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Typical Performance, TA = 25C
(unless otherwise noted)
10 0.5 GHz 8
IP3 (dBm)
40
32
36
IP3
P1 dB (dBm)
30 28
GAIN (dB)
6 2.0 GHz 4 1.0 GHz 1.5 GHz
P1 dB (dBm)
32
0.5 GHz 26 1.0 GHz 24 22 20 -50 1.0 GHz, 4.0 GHz 2.0 GHz
28
P1 dB
2
24
0 16
18
20
22
24
26
28
30
32
20 150
200
250
300
350
400
+25
+100
POWER OUT (dBm)
I d (mA)
TEMPERATURE (C)
Figure 1. Typical Gain vs. Power Out, ZO = 25 , Id = 325 mA.
Figure 2. Output Power at 1 dB Gain Compression, Third Order Intercept Point vs. Current, ZO = 25 , f=1.0GHz.
Figure 3. Output Power at 1 dB Gain Compression vs. Case Temperature, ZO = 25 , Id = 325 mA.
20
16
GAIN (dB)
12 ZO = 50 8 Closed Loop Open Loop
4
0 0.1
0.2 0.3
0.5
1.0
2.0 3.0
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency, Id = 325 mA.
MSA-1000 Bonding Diagram
Input Trace Capacitor (80 pF typ) Output Trace MSA Die 2
A10
MSA-1000 Chip Dimensions
3 1 4
495 m 19.5 mil
2
1
4 2 2 3
(backside contact)
Ground
2
AK
2
2
917 m 36.1 mil
2
Numbers refer to pin contacts listed on the Chip Outline.
Unless otherwise specified, tolerances are 13 m/0.5 mils. Chip thickness is 114 m/4.5 mil. Bond Pads are 41 m/1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die.
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